类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 输出的数量 | 资历状况 | 效率 | 输出类型 | 最大输出电流 | 输入电压-Nom | 配置 | 行间距 | 通道数量 | 电压 | 模拟 IC - 其他类型 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 最大输出电压 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 最大输入电压 | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | 2N7002DW | ON Semiconductor | 数据表 | 3363360 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SC-88 (SC-70-6) | 28mg | 115mA | 2 | 12.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | 活跃 | 1 (Unlimited) | 7.5Ohm | 150°C | -55°C | 200mW | 2 | Dual | 200mW | 5.85 ns | 200mW | 2 N-Channel (Dual) | 7.5Ohm @ 50mA, 5V | 2V @ 250μA | 50pF @ 25V | 60V | 115mA | 1.76V | 20V | 78V | 50pF | 150°C | 逻辑电平门 | 2Ohm | 7.5 Ω | 1.76 V | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9358TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 146 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | IRF9358PBF | Dual | 增强型MOSFET | 2W | 5.7 ns | 2 P-Channel (Dual) | SWITCHING | 16.3m Ω @ 9.2A, 10V | 2.4V @ 25μA | 1740pF @ 25V | 38nC @ 10V | 7.2ns | 30V | 69 ns | 9.2A | -1.8V | MS-012AA | 20V | 0.0163Ohm | -30V | 73A | 210 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.8 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8958A-F085 | ON Semiconductor | 数据表 | 12500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 7A 5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | DUAL | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | N and P-Channel | SWITCHING | 28m Ω @ 7A, 10V | 3V @ 250μA | 575pF @ 15V | 16nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 7A | 0.028Ohm | 20A | 30V | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD3119CTBG | ON Semiconductor | 数据表 | 21000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 9 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | 表面贴装 | 6-WDFN Exposed Pad | YES | 6 | SILICON | 2.6A 2.3A | 2 | 13.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | µCool™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 710mW | 260 | 40 | NTLJD3119C | 6 | Dual | 增强型MOSFET | 710mW | 5.2 ns | N and P-Channel | 65m Ω @ 3.8A, 4.5V | 1V @ 250μA | 271pF @ 10V | 3.7nC @ 4.5V | 13.2ns | 20V | N-CHANNEL AND P-CHANNEL | 13.2 ns | 4.6A | 700mV | 8V | 3.8A | -20V | 18A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 750μm | 2mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S4L08ATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 40 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 54W | FLAT | 未说明 | not_compliant | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 7 ns | 54W | 2 N-Channel (Dual) | 8.2m Ω @ 17A, 10V | 2.2V @ 22μA | 无卤素 | 3050pF @ 25V | 39nC @ 10V | 3ns | 20 ns | 20A | 16V | 40V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS4897AC | ON Semiconductor | 数据表 | 648 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | 6.1A 5.2A | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 26MOhm | Tin (Sn) | 900mW | DUAL | 鸥翼 | 未说明 | 未说明 | 不合格 | 2W | 8 ns | N and P-Channel | 26m Ω @ 6.1A, 10V | 3V @ 250μA | 1055pF @ 20V | 21nC @ 10V | 3ns | N-CHANNEL AND P-CHANNEL | 3 ns | 5.2A | 2V | 20V | 6.1A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.575mm | 4.9mm | 3.9mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S4L07ATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 50 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 65W | FLAT | 未说明 | not_compliant | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 9 ns | 65W | 2 N-Channel (Dual) | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 无卤素 | 3980pF @ 25V | 50nC @ 10V | 4ns | 25 ns | 20A | 16V | 40V | 0.0072Ohm | 230 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2400UV-7 | Diodes Incorporated | 数据表 | 24066 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 1.03A 700mA | 1 | 13.74 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 450mW | DUAL | FLAT | DMC2400 | 6 | 2 | 增强型MOSFET | 450mW | 4.06 ns | N and P-Channel | SWITCHING | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 37.1pF @ 10V | 0.5nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 1.03A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7104TRPBF | Infineon Technologies | 数据表 | 725 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2.3A | 2 | 42 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 250mOhm | Matte Tin (Sn) | 超低电阻 | -20V | 2W | 鸥翼 | -2.3A | IRF7104PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 12 ns | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 1A, 10V | 3V @ 250μA | 290pF @ 15V | 25nC @ 10V | 16ns | 20V | 30 ns | -2.3A | -3V | 12V | -20V | 10A | -20V | METAL-OXIDE SEMICONDUCTOR | 100 ns | 逻辑电平门 | -3 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP2240UDM-7 | Diodes Incorporated | 数据表 | 9870 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | SOT26 (SC74R) | 2A | 2 | 55.34 ns | -65°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 600mW | 鸥翼 | 260 | 40 | DMP2240UDM | 6 | Dual | 增强型MOSFET | 600mW | 11.51 ns | 2 P-Channel (Dual) | SWITCHING | 150m Ω @ 2A, 4.5V | 1V @ 250μA | 320pF @ 16V | 12.09ns | 20V | 12.09 ns | -2A | -1V | 12V | 2A | 0.15Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.4mm | 3mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6308P | ON Semiconductor | 数据表 | 5615 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 7 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 400MOhm | Tin (Sn) | -20V | 300mW | 鸥翼 | -600mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 P-Channel (Dual) | SWITCHING | 400m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 153pF @ 10V | 2.5nC @ 4.5V | 15ns | 20V | 15 ns | 600mA | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2mm | 1.25mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6898AZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 14MOhm | 防静电 | 20V | 2W | 鸥翼 | 未说明 | 9.4A | 未说明 | 不合格 | Dual | 增强型MOSFET | 2W | 10 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 1821pF @ 10V | 23nC @ 4.5V | 15ns | 16 ns | 9.4A | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
NTGD3148NT1G | ON Semiconductor | 数据表 | 3691 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 12.8 ns | -50°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 900mW | 鸥翼 | 未说明 | 未说明 | NTGD3148N | 6 | 不合格 | Dual | 增强型MOSFET | 1.1W | 2 N-Channel (Dual) | SWITCHING | 70m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 300pF @ 10V | 3.8nC @ 4.5V | 11.2ns | 20V | 1.6 ns | 3A | 12V | 3A | 0.07Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRL6372TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 17.9MOhm | Matte Tin (Sn) | HIGH RELIABILITY | 2W | 鸥翼 | IRL6372PBF | Dual | 增强型MOSFET | 2W | 5.9 ns | 2 N-Channel (Dual) | SWITCHING | 17.9m Ω @ 8.1A, 4.5V | 1.1V @ 10μA | 1020pF @ 25V | 11nC @ 4.5V | 13ns | 30V | 15 ns | 8.1A | 12V | 30V | 65A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.1 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN6040SSD-13 | Diodes Incorporated | 数据表 | 24351 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 20.1 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.7W | 鸥翼 | 260 | 40 | AEC-Q101 | 2 | Dual | 增强型MOSFET | 1.3W | 6.6 ns | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 4.5A, 10V | 3V @ 250μA | 1287pF @ 25V | 22.4nC @ 10V | 8.1ns | 60V | 4 ns | 5A | 20V | 5A | 0.04Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC8030 | ON Semiconductor | 数据表 | 1914 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 3 hours ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 196mg | SILICON | 1 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 雪崩 额定 | 800mW | 2 | Dual | 增强型MOSFET | 1.9W | 排水源头 | 7 ns | 2 N-Channel (Dual) | SWITCHING | 10m Ω @ 12A, 10V | 2.8V @ 250μA | 1975pF @ 20V | 30nC @ 10V | 3ns | 40V | 3 ns | 12A | 1.5V | 12V | 40V | 50A | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 30 pF | 800μm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC89521L | ON Semiconductor | 数据表 | 300 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 196mg | SILICON | 8.2A Ta | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 17MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 雪崩能源评级 | 800mW | S-PDSO-N4 | 2 | Dual | 增强型MOSFET | 1.9W | DRAIN | 7.9 ns | 1.9W Ta 16W Tc | 2 N-Channel (Dual) | SWITCHING | 17m Ω @ 8.2A, 10V | 3V @ 250μA | 1635pF @ 30V | 24nC @ 10V | 2.1ns | 1.7 ns | 8.2A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 15 pF | 800μm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSZ15DC02KDHXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 5.1A 3.2A | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, HEXFET® | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 阿瓦兰赫评级 | 2.5W | DUAL | 无铅 | 未说明 | 未说明 | S-PDSO-N5 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 2.5W | N and P-Channel Complementary | 55m Ω @ 5.1A, 4.5V | 1.4V @ 110μA | 无卤素 | 419pF @ 10V | 2.8nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 3.2A | 12V | 20V | 5.1A | 0.055Ohm | 20A | 11 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6930B | ON Semiconductor | 数据表 | 38000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 38MOhm | Tin (Sn) | 30V | 2W | 鸥翼 | 未说明 | 5.5A | 未说明 | 不合格 | 30V | 55A | 增强型MOSFET | 2W | 6 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 38m Ω @ 5.5A, 10V | 3V @ 250μA | 412pF @ 15V | 3.8nC @ 5V | 6ns | 2 ns | 5.5A | 1.9V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 60 pF | 1.5mm | 5mm | 4mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7503TRPBF | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 135mOhm | 超低电阻 | 30V | 1.25W | 鸥翼 | 2.4A | IRF7503PBF | Dual | 增强型MOSFET | 1.25W | 4.7 ns | 2 N-Channel (Dual) | SWITCHING | 135m Ω @ 1.7A, 10V | 1V @ 250μA | 210pF @ 25V | 12nC @ 10V | 10ns | 5.3 ns | 2.4A | 1V | 20V | 30V | 14A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 860μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87353Q5D | Texas Instruments | 数据表 | 51 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | 23 ns | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 12W | 260 | 1 | CSD87353 | 8 | 1 | 95 % | 可调式 | 25A | 12V | 开关控制器 | Dual | 12W | 1V | 2 N-Channel (Half Bridge) | 27V | 2.1V @ 250μA | 3190pF @ 15V | 19nC @ 4.5V | 10ns | 30V | 4.6 ns | PUSH-PULL | 40A | 1.15V | 30V | 逻辑电平门 | 3.4 Ω | 1.5mm | 5mm | 6mm | 1.5mm | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVTJD4001NT1G | ON Semiconductor | 数据表 | 9000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 13 hours ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 94 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 272mW | 鸥翼 | 6 | AEC-Q101 | Dual | 增强型MOSFET | 17 ns | 2 N-Channel (Dual) | SWITCHING | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 33pF @ 5V | 1.3nC @ 5V | 23ns | 30V | 82 ns | 250mA | 20V | 0.25A | 2.5Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 12 pF | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN63D8LDW-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 300mW | 鸥翼 | 260 | 40 | DMN63D8L | AEC-Q101 | Dual | 增强型MOSFET | 300mW | 3.3 ns | 2 N-Channel (Dual) | SWITCHING | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 22pF @ 25V | 870nC @ 10V | 3.2ns | 30V | 6.3 ns | 220mA | 1.5V | 20V | 4.5Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7389TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2.5W | DUAL | 鸥翼 | 7.3A | IRF7389PBF | 6.3 mm | 1 | 增强型MOSFET | 2.5W | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 32 ns | 7.3A | 1V | 20V | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSC0924NDIATMA1 | Infineon Technologies | 数据表 | 4900 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 17A 32A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | no | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N6 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 排水源头 | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1160pF @ 15V | 10nC @ 4.5V | 30V | 32A | 20V | 1.3A | 0.007Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
